Invention Grant
- Patent Title: Two-dimensional perovskite forming material, stacked structure, element, and transistor
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Application No.: US15776530Application Date: 2016-11-16
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Publication No.: US10563320B2Publication Date: 2020-02-18
- Inventor: Toshinori Matsushima , Chuanjiang Qin , Chihaya Adachi
- Applicant: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
- Applicant Address: JP Fukuoka
- Assignee: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
- Current Assignee: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
- Current Assignee Address: JP Fukuoka
- Agency: Browdy and Neimark, P.L.L.C.
- Priority: JP2015-224923 20151117; JP2016-065085 20160329
- International Application: PCT/JP2016/083932 WO 20161116
- International Announcement: WO2017/086337 WO 20170526
- Main IPC: C30B7/00
- IPC: C30B7/00 ; H01L51/05 ; H01L51/00 ; C30B29/52 ; C30B29/54
Abstract:
A two-dimensional perovskite forming material with an ammonium halide group disposed on its surface can achieve a high carrier mobility. Preferably, the two-dimensional perovskite forming material includes a monolayer that has such an ammonium halide group at a terminal of its molecular structure, and the ammonium halide group in the monolayer is disposed in an ordered fashion on the surface of the material.
Public/Granted literature
- US20180337357A1 TWO-DIMENSIONAL PEROVSKITE FORMING MATERIAL, STACKED STRUCTURE, ELEMENT, AND TRANSISTOR Public/Granted day:2018-11-22
Information query
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