- Patent Title: Pseudo defect sample, process for producing the same, method for adjusting ultrasonic flaw detection measurement condition, method for inspecting target material, and process for producing sputtering target
-
Application No.: US15771205Application Date: 2018-01-18
-
Publication No.: US10564134B2Publication Date: 2020-02-18
- Inventor: Hiroaki Sugawara , Koji Nishioka
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2017-010579 20170124; JP2017-146696 20170728
- International Application: PCT/JP2018/001351 WO 20180118
- International Announcement: WO2018/139330 WO 20180802
- Main IPC: G01N29/30
- IPC: G01N29/30 ; G01N29/04 ; G01N29/44

Abstract:
A pseudo defect sample for adjusting an ultrasonic flaw detection measurement condition to inspect a defect within a target material, the pseudo defect sample comprising a substrate which has a first surface and a second surface opposed to the first surface, the substrate having a counterbore which is formed therein from a side of the first surface to a first depth, and a flat-bottomed hole which is formed from the bottom surface of the counterbore to a second depth and formed in a part of a bottom surface of the counterbore, and a ratio ϕ/d of an equivalent circle diameter ϕ of the flat-bottomed hole to the second depth d of the flat-bottomed hole being: 0.08 or more and less than 0.40 when the equivalent circle diameter ϕ of the flat-bottomed hole is less than 0.3 mm; 0.1 or more and less than 0.60 when the equivalent circle diameter ϕ of the flat-bottomed hole is 0.3 mm or more and less than 0.4 mm; and 0.11 or more and less than 1.60 when the equivalent circle diameter ϕ of the flat-bottomed hole is 0.4 mm or more.
Public/Granted literature
Information query