A method and system of monitoring a reliability of a semiconductor circuit are provided. A current consumption of a first ring oscillator that is in static state is measured at predetermined intervals. Each measured current consumption value is stored. A baseline current consumption value of the first ring oscillator is determined based on the stored current consumption values. A latest measured current consumption value of the first ring oscillator is compared to the baseline current consumption value. Upon determining that the latest measured current consumption value is above a threshold deviation from the baseline current consumption value, the first ring oscillator is identified to have a dielectric breakdown degradation.