Invention Grant
- Patent Title: Magnetoresistive effect element unit and magnetoresistive effect element device
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Application No.: US16332895Application Date: 2018-01-15
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Publication No.: US10564228B2Publication Date: 2020-02-18
- Inventor: Tomokazu Ogomi , Kenji Shimohata , Jin Inoue , Tetsuji Imamura , Yoshinori Yamaguchi , Takashi Daimon
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-012689 20170127
- International Application: PCT/JP2018/000818 WO 20180115
- International Announcement: WO2018/139233 WO 20180802
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01L43/08 ; H01L43/10

Abstract:
The magnetoresistive effect element unit includes an anisotropic magnetoresistive effect element and a conductive reset line that, as viewed in a direction orthogonal to both a magnetic sensing direction x′ and an easy magnetization direction y′ of the anisotropic magnetoresistive effect element, passes through a center of the anisotropic magnetoresistive effect element, extends in a direction inclined from the easy magnetization direction y′ so as to form an angle of 45° or less with the easy magnetization direction y′, and is parallel to a plane including the magnetic sensing direction x′ and the easy magnetization direction y′. As viewed in the direction orthogonal to both the magnetic sensing direction x′ and the easy magnetization direction y′, the reset line has a width that covers an entirety of the anisotropic magnetoresistive effect element.
Public/Granted literature
- US20190204396A1 MAGNETORESISTIVE EFFECT ELEMENT UNIT AND MAGNETORESISTIVE EFFECT ELEMENT DEVICE Public/Granted day:2019-07-04
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