Invention Grant
- Patent Title: Memory devices and systems with parallel impedance adjustment circuitry and methods for operating the same
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Application No.: US16019254Application Date: 2018-06-26
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Publication No.: US10565151B2Publication Date: 2020-02-18
- Inventor: Hyun Yoo Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G06F13/40
- IPC: G06F13/40 ; G11C29/50 ; G11C29/02 ; H05K1/02 ; H04L25/02 ; G06F13/00

Abstract:
Methods, systems, and apparatuses related to memory operation with common clock signals are provided. A memory device or system that includes one or more memory devices may be operable with a common clock signal without a delay from switching on-die termination on or off. For example, a memory device may comprise first impedance adjustment circuitry configured to provide a first impedance to a received clock signal having a clock impedance and second impedance adjustment circuitry configured to provide a second impedance to the received clock signal. The first impedance and the second impedance may be configured to provide a combined impedance about equal to the clock impedance when the first impedance adjustment circuitry and the second impedance adjustment circuitry are connected to the received clock signal in parallel.
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