A cell, in a semiconductor device, including: first and second active areas in a semiconductor substrate on opposite sides of the first axis; first, third and fifth, and correspondingly collinear second, fourth and sixth, having long axes in a second direction perpendicular to the first direction; the (A) first, third and fifth, and (B) second, fourth and sixth, conductive structures correspondingly overlapping the second active area; the first and second conductive structures correspondingly being centered between the (C) third and fifth, and (D) fourth and sixth, conductive structures; and a seventh conductive structure; the fourth conductive structure being located over first and second gaps between corresponding ones of the third through sixth, conductive structures; and the fourth conductive structure occupying an area which substantially overlaps one of the first and second conductive structures and a corresponding one of the first and second gaps.