Apparatuses and methods for reducing sense amplifier leakage current during an active power-down are disclosed. An example apparatus includes a memory that includes a memory cell and a first digit line and a second digit line. The memory cell is coupled to the first digit line in response to activation of a wordline coupled the memory cell. The example apparatus further includes a sense amplifier comprising of a first transistor coupled between the first digit line and a first gut node of the sense amplifier and a second transistor coupled between the second digit line and a second gut node of the sense amplifier. While the wordline is activated, in response to entering a power-down mode, the first transistor is disabled to decouple the first digit line from the first gut node and the second transistor is disabled to decouple the second digit line from the second gut node.