- Patent Title: Method for programming a bipolar resistive switching memory device
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Application No.: US14764790Application Date: 2014-01-30
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Publication No.: US10566055B2Publication Date: 2020-02-18
- Inventor: Santhosh Onkaraiah , Marc Belleville , Fabien Clermidy
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1350796 20130130
- International Application: PCT/EP2014/051753 WO 20140130
- International Announcement: WO2014/118255 WO 20140807
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C14/00 ; H03K3/356

Abstract:
An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant state 0 or 1; a second mechanism applying, to the second electrode, a control signal that alternates, during time period d, between state 1 and state 0, the control signal being same regardless of the state in which the memory device is programmed; a selection device allowing a current to flow into the memory device during a programming time included in time period d; and a change of state of the control signal taking place during the programming time.
Public/Granted literature
- US20150371705A1 METHOD FOR PROGRAMMING A BIPOLAR RESISTIVE SWITCHING MEMORY DEVICE Public/Granted day:2015-12-24
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