Invention Grant
- Patent Title: Electronic device performing training on memory device by rank unit and training method thereof
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Application No.: US16034848Application Date: 2018-07-13
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Publication No.: US10566075B2Publication Date: 2020-02-18
- Inventor: Yongseob Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0165305 20171204
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C11/402 ; G11C11/4099 ; G11C11/406 ; G06F13/42 ; G11C8/00

Abstract:
An electronic device includes a memory device including first and second ranks, and a system-on-chip that exchanges data with the memory device. The system-on-chip loads a first training code to the first rank and performs a first training operation on the second rank using the first training code loaded to the first rank, and loads the first training code to the second rank and performs a second training operation on the first rank using the first training code loaded to the second rank. The system-on-chip generates a first reference voltage for sampling output data of the first rank, and generates a second reference voltage for sampling output data of the second rank. The first and second reference voltages are generated based on a first result of performing the first training operation on the second rank, and a second result of performing the second training operation on the first rank.
Public/Granted literature
- US20190172516A1 ELECTRONIC DEVICE PERFORMING TRAINING ON MEMORY DEVICE BY RANK UNIT AND TRAINING METHOD THEREOF Public/Granted day:2019-06-06
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