Invention Grant
- Patent Title: Microwave probe, plasma monitoring system including the microwave probe, and method for fabricating semiconductor device using the system
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Application No.: US15426672Application Date: 2017-02-07
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Publication No.: US10566176B2Publication Date: 2020-02-18
- Inventor: Se-jin Oh , Woong Ko , Vasily Pashkovskiy , Doug-yong Sung , Ki-ho Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0124942 20150903
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/66 ; H01L21/263 ; G01N22/00 ; H01L21/3065 ; H01L21/67 ; H01R9/05

Abstract:
Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.
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