- Patent Title: Ultrathin atomic layer deposition film accuracy thickness control
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Application No.: US14664545Application Date: 2015-03-20
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Publication No.: US10566187B2Publication Date: 2020-02-18
- Inventor: Jun Qian , Hu Kang , Adrien LaVoie , Seiji Matsuyama , Purushottam Kumar
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C23C16/40
- IPC: C23C16/40 ; H01L21/02
Abstract:
Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.
Public/Granted literature
- US20160276148A1 ULTRATHIN ATOMIC LAYER DEPOSITION FILM ACCURACY THICKNESS CONTROL Public/Granted day:2016-09-22
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