Semiconductor devices and methods are provided to fabricate field effect transistor (FET) devices having local wiring between the stacked devices. For example, a semiconductor device includes a first FET device on a semiconductor substrate, the FET device comprising a first source/drain layer, and a first gate structure comprising a gate dielectric layer and a metal gate layer. The semiconductor device further includes a second FET device comprising a second source/drain layer, and a second gate structure comprising a gate dielectric layer and a metal gate layer; wherein the first and second FET devices are in a stacked configuration. The semiconductor device further includes one or more conductive vias in communication with either the first gate structure of the first FET device or the second gate structure of the second FET device.