A semiconductor device includes a first and a second chips. A first inductor is above a first surface or a second surface located on an opposite side to the first surface. A first metal electrode is between the first and second surface to penetrate through the first substrate and to be connected to the first inductor. The second chip includes a second element provided on a third surface of a second substrate. A second inductor provided above a third surface of the second substrate or a fourth surface located on an opposite side to the third surface. A second metal electrode is provided between the third surface and the fourth surface to penetrate through the second substrate and to be connected to the second inductor. The first and second chips are stacked. The first and second inductors are electrically connected via the first or second metal electrode, as one inductor.