Invention Grant
- Patent Title: Optoelectronic semiconductor device
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Application No.: US15624484Application Date: 2017-06-15
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Publication No.: US10566322B2Publication Date: 2020-02-18
- Inventor: Hsien-Te Chen
- Applicant: ULTRA DISPLAY TECHNOLOGY CORP.
- Applicant Address: TW Taipei
- Assignee: ULTRA DISPLAY TECHNOLOGY CORP.
- Current Assignee: ULTRA DISPLAY TECHNOLOGY CORP.
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW105119178A 20160617
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L27/12 ; H01L31/02 ; H01L31/0224 ; H01L31/0232 ; H01L31/173 ; H01L33/00 ; H01L33/36 ; H01L33/50 ; H01L33/62 ; G06K9/00 ; H01L25/075
Abstract:
An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 μm.
Public/Granted literature
- US20170365588A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE Public/Granted day:2017-12-21
Information query
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