Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16202607Application Date: 2018-11-28
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Publication No.: US10566340B1Publication Date: 2020-02-18
- Inventor: Chang-Man Son , Hyun-Soo Shin , Jae-Eun Jeon , Sung-Hyun Hwang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2018-0095331 20180816
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/11568 ; H01L27/11573

Abstract:
A semiconductor memory device includes a plurality of bit lines disposed over memory cells along a second direction intersecting with a first direction, and extending in the first direction; and a plurality of first wirings and a plurality of second wirings alternately disposed along the second direction over the bit lines, and extending in the first direction while being bent into zigzag shapes.
Public/Granted literature
- US20200058668A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-02-20
Information query
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