Invention Grant
- Patent Title: Semiconductor memory device including 3-dimensional structure and method for manufacturing the same
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Application No.: US15803035Application Date: 2017-11-03
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Publication No.: US10566343B2Publication Date: 2020-02-18
- Inventor: Sung-Lae Oh , Jin-Ho Kim , Chang-Man Son , Go-Hyun Lee , Young-Ock Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0055420 20160504
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11573 ; H01L27/06 ; H01L27/11565 ; H01L27/11575 ; H01L23/522 ; H01L23/528 ; H01L27/1157

Abstract:
A semiconductor memory device mc des a substrate defined with cell regions and a contact region between the cell regions; a dielectric structure formed over the contact region; a memory block having cell parts which are respectively formed over the cell regions, a coupling part which is formed over the contact region and couples the cell parts, and a through part which accommodates the dielectric structure; a peripheral circuit formed over the substrate under the memory block; bottom wiring lines disposed between the memory block and the peripheral circuit, and electrically coupled with the peripheral circuit; top wiring lines disposed over the memory block; and contact plugs passing through the dielectric structure and coupling the bottom wiring lines and the top wiring lines.
Public/Granted literature
- US20180053782A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING 3-DIMENSIONAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-02-22
Information query
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