Invention Grant
- Patent Title: Method of manufacturing semiconductor device using exposure mask having light transmission holes to transfer slit shaped pattern to stack structure
-
Application No.: US15983726Application Date: 2018-05-18
-
Publication No.: US10566344B2Publication Date: 2020-02-18
- Inventor: Woo Sung Moon , Do Youn Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0134728 20171017
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/11582 ; H01L21/311 ; H01L27/11565 ; H01L21/027 ; H01L21/475 ; H01L21/768
Abstract:
A method of manufacturing a three-dimensional semiconductor device, the method comprising: forming a stack structure; patterning channel holes using light transmission holes of an exposure mask; forming cell plugs penetrating the stack structure; and patterning wave-type slits using light transmission holes of the exposure mask, wherein the step of patterning holes further includes sequentially stacking a first mask layer and a first photoresist layer on the stack structure, and exposing the first photoresist layer by light transmitted through the exposure mask.
Public/Granted literature
- US20190115359A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2019-04-18
Information query
IPC分类:
