Invention Grant
- Patent Title: Solid state image sensor and manufacturing method thereof
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Application No.: US15983029Application Date: 2018-05-17
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Publication No.: US10566373B2Publication Date: 2020-02-18
- Inventor: Yotaro Goto , Tatsuya Kunikiyo , Hidenori Sato
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2017-117593 20170615
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L27/146 ; H01L23/00

Abstract:
In a solid state image sensor having two semiconductor substrates or more laminated longitudinally, electrical connection between the semiconductor substrates is made by a fine plug. An insulating film covering a first rear surface of a semiconductor substrate having a light receiving element, and an interlayer insulating film covering a second main surface of a semiconductor substrate mounting a semiconductor element are joined to each other. In its joint surface, a plug penetrating the insulating film and a lug embedded in a connection hole in an upper surface of the interlayer insulating film are joined, and the light receiving element and the semiconductor element are electrically connected through the plugs.
Public/Granted literature
- US20180366508A1 SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-12-20
Information query
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