Invention Grant
- Patent Title: Two pass MRAM dummy solution
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Application No.: US16175216Application Date: 2018-10-30
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Publication No.: US10566384B2Publication Date: 2020-02-18
- Inventor: Wanbing Yi , Neha Nayyar , Curtis Chun-I Hsieh , Mahesh Bhatkar , Wenjun Liu , Juan Boon Tan
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Ditthavong & Steiner P.C.
- Main IPC: H01L27/22
- IPC: H01L27/22

Abstract:
Methods of fabricating a flexible dummy fill to increase MTJ density are provided. Embodiments include forming a first oxide layer; forming lower interconnect layers in the first oxide layer; forming a nitride layer over the first oxide layer and the lower interconnect layers; forming a second oxide layer over the nitride layer; forming bottom electrodes through the second oxide layer and the nitride layer contacting a portion of an upper surface of the lower interconnect layers; forming MTJ structures over the bottom electrodes; forming top electrodes over the MTJ structures; and forming upper interconnect layers over one or more of the top electrodes.
Public/Granted literature
- US20190074434A1 TWO PASS MRAM DUMMY SOLUTION Public/Granted day:2019-03-07
Information query
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