Invention Grant
- Patent Title: Semiconductor device with improved field layer
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Application No.: US16103949Application Date: 2018-08-15
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Publication No.: US10566416B2Publication Date: 2020-02-18
- Inventor: Amaury Gendron-Hansen , Bruce Odekirk , Nathaniel Berliner , Dumitru Sdrulla
- Applicant: Microsemi Corporation
- Applicant Address: US AZ Chandler
- Assignee: Microsemi Corporation
- Current Assignee: Microsemi Corporation
- Current Assignee Address: US AZ Chandler
- Agency: Glass and Associates
- Agent Kenneth Glass
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/16 ; H01L29/872 ; H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L29/45 ; H01L21/04 ; H01L29/861 ; H01L29/20
Abstract:
A semiconductor device constituted of: a semiconductor layer; and a field layer patterned on said semiconductor layer, said field layer constituted of material having characteristics which block diffusion of mobile ions and maintain structural integrity at activation temperatures of up to 1200 degrees centigrade.
Public/Granted literature
- US20190058032A1 Semiconductor device with improved field layer Public/Granted day:2019-02-21
Information query
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