Invention Grant
- Patent Title: Method for manufacturing a BJT FINFET device
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Application No.: US16153461Application Date: 2018-10-05
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Publication No.: US10566421B2Publication Date: 2020-02-18
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201510551705 20150901
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/10 ; H01L21/265 ; H01L29/735 ; H01L29/66 ; H01L21/306 ; H01L21/308 ; H01L21/324 ; H01L23/535 ; H01L21/768 ; H01L29/06
Abstract:
A method for manufacturing a fin-type bipolar semiconductor device includes providing a substrate comprising a first region of a first conductivity type and a second region of a second conductivity type adjacent the first region, etching the substrate to form a third region in the first region, a first set of fins on the third region, a fourth region in the second region, and a second set of fins on the fourth region, performing a first implantation into a first portion of the second set of fins and a corresponding portion of the fourth region to form an emitter region of the first conductivity type, a remaining portion of the fourth region not being doped forming a base region adjacent the emitter region and forming a junction in the fourth region, and performing a second implantation into a second portion of the second set of fins different from the first portion.
Public/Granted literature
- US20190051726A1 METHOD FOR MANUFACTURING A BJT FINFET DEVICE Public/Granted day:2019-02-14
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