Invention Grant
- Patent Title: Thin film transistor and array substrate
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Application No.: US15241760Application Date: 2016-08-19
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Publication No.: US10566437B2Publication Date: 2020-02-18
- Inventor: Masami Hayashi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-165463 20150825
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/49 ; H01L27/12 ; H01L29/417 ; H01L29/423
Abstract:
A first oxide semiconductor region serving as a channel region of a TFT is formed on a first insulating region of a gate insulating film whose hydrogen content is comparatively low, and a second oxide semiconductor region that contacts with a source electrode and a drain electrode is formed on a second insulating region of a gate insulating film whose hydrogen content is comparatively high. For this reason, sheet resistance R1 of the first oxide semiconductor region is comparatively high, and sheet resistance R3 of the second oxide semiconductor region is comparatively low so that R1>R3.
Public/Granted literature
- US20170062580A1 THIN FILM TRANSISTOR AND ARRAY SUBSTRATE Public/Granted day:2017-03-02
Information query
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