Invention Grant
- Patent Title: Single column compound semiconductor bipolar junction transistor with all-around base
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Application No.: US15818438Application Date: 2017-11-20
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Publication No.: US10566447B2Publication Date: 2020-02-18
- Inventor: Karthik Balakrishnan , Pouya Hashemi , Tak H. Ning , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffmann & Baron, LLP
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/267 ; H01L29/32 ; H01L29/66 ; H01L21/02 ; H01L29/06
Abstract:
A vertical, single column compound semiconductor bipolar junction transistor device includes an all-around extrinsic base. Aspect ratio trapping is employed during fabrication of the transistor device on a silicon substrate. Homojunction and heterojunction devices are formed using III-V materials with appropriate bandgaps. The emitter of the device may be electrically connected by a lateral buried metal contact.
Public/Granted literature
- US20190157434A1 SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WITH ALL-AROUND BASE Public/Granted day:2019-05-23
Information query
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