Invention Grant
- Patent Title: Semiconductor device, semiconductor device manufacturing method, power supply circuit, and computer
-
Application No.: US16111768Application Date: 2018-08-24
-
Publication No.: US10566451B2Publication Date: 2020-02-18
- Inventor: Tatsuo Shimizu , Toshiya Yonehara , Akira Mukai
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClellland, Maier & Neustadt, L.L.P.
- Priority: JP2018-039275 20180306
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/423 ; H01L29/207 ; H01L29/205 ; H01L21/3065 ; H01L29/66 ; H01L21/223 ; H01L29/20
Abstract:
A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer located on the first nitride semiconductor layer, a first and second electrode located on or above the first nitride semiconductor layer; a trench located in the second nitride semiconductor layer between the first electrode and the second electrode, and including a bottom surface and a side surface, the bottom surface being located in one of the first nitride semiconductor layer and the second nitride semiconductor layer; a gate electrode located in the trench; a gate insulating layer located between the bottom surface and the gate electrode and between the side surface and the gate electrode; and a region located in at least one of the first nitride semiconductor layer and the second nitride semiconductor layer, including a first portion adjacent to the bottom surface, and containing fluorine.
Public/Granted literature
- US20190280111A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, POWER SUPPLY CIRCUIT, AND COMPUTER Public/Granted day:2019-09-12
Information query
IPC分类:
