Invention Grant
- Patent Title: Thin film transistor and method for manufacturing the same array substrate and display device
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Application No.: US15567060Application Date: 2017-03-10
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Publication No.: US10566461B2Publication Date: 2020-02-18
- Inventor: Hui An , Dezhi Xu , Xianxue Duan
- Applicant: BOE Technology Group Co., Ltd. , Hefei BOE Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing CN Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Anhui
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201610599762 20160727
- International Application: PCT/CN2017/076276 WO 20170310
- International Announcement: WO2018/018893 WO 20180201
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/786 ; H01L29/10 ; H01L29/06 ; H01L27/12 ; H01L29/423 ; G02F1/1343 ; G02F1/1368 ; H01L29/66

Abstract:
A thin film transistor and a method for manufacturing the same, an array substrate, and a display device are provided in embodiments of the disclosure. The method for manufacturing a thin film transistor in embodiments of the disclosure forms a plurality of strip-shaped protrusions on a substrate by a patterning process before forming structures of various layers of the thin film transistor, and then forms sequentially a gate electrode, a gate insulating layer, an active layer, a source-drain electrode on the plurality of strip-shaped protrusions; in other words, the thin film transistor is prepared, whose channels are aligned with and shaped to be similar to the plurality of strip-shaped protrusions, in a widthwise direction thereof.
Public/Granted literature
- US20180294361A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2018-10-11
Information query
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