Invention Grant
- Patent Title: High-efficiency photoelectric element and method for manufacturing same
-
Application No.: US15117830Application Date: 2014-07-03
-
Publication No.: US10566475B2Publication Date: 2020-02-18
- Inventor: Joondong Kim , Ju-Hyung Yun
- Applicant: INCHEON UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
- Applicant Address: KR Incheon
- Assignee: Icheon University Industry Academic Cooperation Foundation
- Current Assignee: Icheon University Industry Academic Cooperation Foundation
- Current Assignee Address: KR Incheon
- Agency: RatnerPrestia
- Priority: KR10-2014-0016643 20140213
- International Application: PCT/KR2014/005951 WO 20140703
- International Announcement: WO2015/122581 WO 20150820
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/054 ; H01L31/0236 ; H01L31/0216 ; H01L31/18
Abstract:
The present invention relates to a photoelectric element and a method for manufacturing the same, and the photoelectric element according to the present invention includes: a semiconductor substrate; and transparent conductor pattern portions formed on a surface of the semiconductor substrate to be connected to each other with a specific cycle such that incident light is concentrated in a specific area of the semiconductor substrate.
Public/Granted literature
- US20160372614A1 HIGH-EFFICIENCY PHOTOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING SAME Public/Granted day:2016-12-22
Information query
IPC分类:
