Invention Grant
- Patent Title: Solar cell using quantum dots and method of fabricating same
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Application No.: US13911935Application Date: 2013-06-06
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Publication No.: US10566491B2Publication Date: 2020-02-18
- Inventor: Andrei Afanasev , Ara Kechiantz , Jean-Louis Lazzari
- Applicant: The George Washington University
- Applicant Address: US DC Washington FR Paris
- Assignee: The George Washington University,National Centre for Scientific Research
- Current Assignee: The George Washington University,National Centre for Scientific Research
- Current Assignee Address: US DC Washington FR Paris
- Agency: Blank Rome LLP
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L31/18 ; H01L31/0693 ; B82Y99/00 ; B82Y30/00

Abstract:
An efficient solar cell and method of fabricating the same is disclosed. The solar cell includes an n-doped substrate layer. A p-doped buffer layer is disposed on the n-doped substrate layer. A quantum dot absorber stack is disposed on the buffer layer. The absorber stack includes at least one quantum dot layer and one p-doped spacer layer. A p-doped cap layer is disposed on the quantum dot absorber layer. The thickness of the quantum dot layer is less than an electron diffusion length from the depletion region formed by the n-doped substrate layer and the p-doped buffer layer. The quantum dot absorber layer allows for additional photo currents from two-photon absorption from the p-doped cap layer being exposed to a light source.
Public/Granted literature
- US20140224328A1 SOLAR CELL USING QUANTUM DOTS AND METHOD OF FABRICATING SAME Public/Granted day:2014-08-14
Information query
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