Invention Grant
- Patent Title: Optoelectronic semiconductor component
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Application No.: US16307054Application Date: 2017-05-30
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Publication No.: US10566500B2Publication Date: 2020-02-18
- Inventor: Alexander F. Pfeuffer
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: DLA Piper LLP (US)
- Priority: DE102016111113 20160617
- International Application: PCT/EP2017/063033 WO 20170530
- International Announcement: WO2017/215910 WO 20171221
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/40 ; H01L33/44 ; H01L33/38 ; H01L33/02 ; H01L33/54 ; H01L33/62

Abstract:
An optoelectronic semiconductor component has a semiconductor body, wherein the semiconductor body includes a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region that generates or receives radiation disposed between the first semiconductor layer and the second semiconductor layer; the semiconductor body has a functional region in which the first semiconductor layer electrically conductively connects to a first terminal layer and the second semiconductor layer electrically conductively connects to a second terminal layer; an isolating layer is arranged on a side of the first terminal layer facing away from the semiconductor body; an interruption is formed in the isolating layer which at least locally delimits an inner subregion of the isolating layer in a lateral direction; the interruption encloses the functional region in the lateral direction; and in a plan view of the semiconductor component, the interruption overlaps with the active region.
Public/Granted literature
- US20190140143A1 OPTOELECTRONIC SEMICONDUCTOR COMPONENT Public/Granted day:2019-05-09
Information query
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