Invention Grant
- Patent Title: Semiconductor light-emitting device
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Application No.: US15171087Application Date: 2016-06-02
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Publication No.: US10566502B2Publication Date: 2020-02-18
- Inventor: Kyung Wook Hwang , Si Han Kim , Wan Tae Lim , Eun Joo Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0086020 20150617
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/32 ; H01L33/58 ; H01L33/42 ; H01L33/50 ; H01L33/56 ; H01L33/06 ; H01L33/22

Abstract:
A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.
Public/Granted literature
- US20160372636A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2016-12-22
Information query
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