- Patent Title: Integrated circuit and method of manufacturing integrated circuit
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Application No.: US16045120Application Date: 2018-07-25
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Publication No.: US10566941B2Publication Date: 2020-02-18
- Inventor: Naohiro Nomura , Sachito Horiuchi , Kunihiko Iwamoto
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Cantor Colburn LLP
- Priority: JP2017-144864 20170726
- Main IPC: H03F3/187
- IPC: H03F3/187 ; H03F3/45 ; H03F3/30 ; H01L21/762 ; H01L21/8249
Abstract:
An integrated circuit having a plurality of miniaturized transistors, wherein the plurality of transistors include: high concentration transistors which include channel regions having impurity concentrations of a first concentration; and low concentration transistors which include channel regions having impurity concentrations of a second concentration lower than the first concentration.
Public/Granted literature
- US20190036500A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT Public/Granted day:2019-01-31
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