Invention Grant
- Patent Title: Sensing device
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Application No.: US15668844Application Date: 2017-08-04
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Publication No.: US10570008B2Publication Date: 2020-02-25
- Inventor: Ssu-Che Yang , Wen-Chi Lin , Keng-Nan Chen
- Applicant: SILICON INTEGRATED SYSTEMS CORP.
- Applicant Address: TW Hsinchu
- Assignee: SILICON INTEGRATED SYSTEMS CORP.
- Current Assignee: SILICON INTEGRATED SYSTEMS CORP.
- Current Assignee Address: TW Hsinchu
- Agent Maschoff Brennan
- Priority: TW105135898A 20161104
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81B7/04 ; H04R3/04 ; G01R17/04 ; H02M3/07

Abstract:
A sensing device includes a micro-electromechanical sensor, a source follower and an amplifier. The source follower includes a first output module including a first transistor and a second transistor. The micro-electromechanical sensor is configured to generate an input signal. A first terminal of the first transistor is configured to receive a first reference voltage. A second terminal and a control of the first transistor are electrically connected to the first output terminal and to a first current source respectively. A first terminal and a second terminal of the second transistor are electrically connected to the second terminal and the control terminal of the first transistor respectively. A control terminal of the second transistor is configured to receive the input signal. A first input terminal and a second input terminal of the amplifier are electrically connected to a first output terminal configured to receive a common-mode voltage respectively.
Public/Granted literature
- US20180127264A1 SENSING DEVICE Public/Granted day:2018-05-10
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