Invention Grant
- Patent Title: System for producing high-purity granular silicon
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Application No.: US15694792Application Date: 2017-09-02
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Publication No.: US10576438B2Publication Date: 2020-03-03
- Inventor: Xi Chu
- Applicant: Xi Chu
- Agent Charlotte C. Wilson
- Main IPC: B01J8/12
- IPC: B01J8/12 ; C01B33/027 ; B01J8/00 ; B01J8/08 ; B01J8/16 ; B01J15/00 ; C01B33/037 ; C01B33/025 ; C01B33/03

Abstract:
The present disclosure provides a reactor and a method for the production of high purity silicon granules. The reactor includes a reactor chamber; and the reaction chamber is equipped with a solid feeding port, auxiliary gas inlet, raw material gas inlet, and exhaust gas export. The reaction chamber is also equipped with an internal gas distributor; a preheating unit; and an external exhaust gas processing unit connected between the preheating unit and a gas inlet. The reaction chamber is further equipped with a surface finishing unit, a heating unit, and a dynamics-generating unit. The reaction occurs through decomposition of silicon-containing gas in a densely stacked, high purity granular silicon layer reaction bed in relative motion, and uses the exhaust gas for heating. The present invention achieves a large-scale, efficient, energy-saving, continuous, low-cost production of high purity silicon granules.
Public/Granted literature
- US20170361292A1 SYSTEM FOR PRODUCING HIGH-PURITY GRANULAR SILICON Public/Granted day:2017-12-21
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