An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.