Invention Grant
- Patent Title: Diode-based temperature sensor
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Application No.: US15706734Application Date: 2017-09-17
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Publication No.: US10578497B2Publication Date: 2020-03-03
- Inventor: William Xia , Yang Du
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Holland & Hart LLP
- Main IPC: G01K7/01
- IPC: G01K7/01 ; G01K7/02 ; G01K3/00

Abstract:
Disclosed is a system for measuring temperature in an integrated circuit (IC) device. The system includes a diode-based temperature sensor comprising a first plurality of diodes coupled between a power supply pin of the IC device and a ground pin of the IC device and a second plurality of diodes coupled between the power supply pin and the ground pin, and a voltage sensing circuit configured to detect a voltage difference between the first plurality of diodes and the second plurality of diodes.
Public/Granted literature
- US20190086272A1 DIODE-BASED TEMPERATURE SENSOR Public/Granted day:2019-03-21
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