Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16183433Application Date: 2018-11-07
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Publication No.: US10578805B2Publication Date: 2020-03-03
- Inventor: Yasutaka Nakashiba , Shinichi Watanuki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-250943 20171227
- Main IPC: G02B6/30
- IPC: G02B6/30 ; G02B6/122 ; G02B6/13 ; G02B6/12

Abstract:
An optical waveguide formed at the same layer as that of a microscopic optical device and a spot size converter largely different in size are integrally formed. A semiconductor device has an optical waveguide part functioning as a spot size converter. The optical waveguide part includes a plurality of optical waveguide bodies penetrating through an interlayer insulation layer in the thickness direction.
Public/Granted literature
- US20190196110A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-06-27
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