A semiconductor device may include a refresh control circuit which may generate test addresses that are counted based on a refresh signal and a detection clock signal and may senses logic levels of internal data corresponding to the test addresses to generate a sense signal. The semiconductor device may include a memory circuit may include a plurality of word lines which are selected by the test addresses and may output the internal data stored in memory cells connected to the word lines. The semiconductor device may include an address storage circuit may divide each of the test addresses into a main group and a sub-group to store the main groups and the sub-groups of the test addresses. The address storage circuit may store the sub-groups which are inputted at a point of time that the sense signal is generated, regarding the stored main groups having the same level combination.