Invention Grant
- Patent Title: Semiconductor memory device and method of operating the same
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Application No.: US16383486Application Date: 2019-04-12
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Publication No.: US10580503B2Publication Date: 2020-03-03
- Inventor: Ji Man Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2017-0115987 20170911
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C16/08 ; G11C16/26 ; G11C11/56

Abstract:
A semiconductor memory device and a method of operating the same are provided. The method of operating the semiconductor memory device includes determining a target word line coupled to an over-programmed memory cell, backing up data stored in memory cells coupled to the target word line in a second memory area, wherein the se second memory area is different from a first memory area where the memory cells coupled to the target word line are disposed, and applying a stepped-up read pass voltage to the target word line when a read operation is performed on a selected memory cell in a memory block coupled to the target word line, wherein the selected memory cell is different from the over-programmed memory cell. Therefore, the operation reliability of the semiconductor memory device is improved.
Public/Granted literature
- US20190237149A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2019-08-01
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