Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US15348245Application Date: 2016-11-10
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Publication No.: US10580653B2Publication Date: 2020-03-03
- Inventor: Franz-Josef Niedernostheide , Johannes Georg Laven , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Design IP
- Priority: DE102015119648 20151113
- Main IPC: H01L21/263
- IPC: H01L21/263 ; H01L21/28 ; H01L21/265 ; H01L21/266 ; H01L21/324
Abstract:
A method of forming a semiconductor device includes irradiating a semiconductor body with particles. Dopant ions are implanted into the semiconductor body such that the dopant ions are configured to be activated as donors or acceptors. Thereafter, the semiconductor body is processed thermally.
Public/Granted literature
- US20170140938A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2017-05-18
Information query
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