A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, an active region on the substrate, an electrode in the active region, and an interlayer dielectric layer covering the active region and the electrode. The method also includes etching the interlayer dielectric layer to form a contact hole exposing the electrode, forming a conductive adhesion layer on a bottom and sidewalls of the contact hole, and forming a contact member on the conductive adhesion layer filling the contact hole. The conductive adhesion layer at the bottom and sidewalls of the contact hole prevents the electrode from being oxidized while forming the contact member, thereby effectively reducing the contact resistance and the barrier height of the semiconductor device.