Invention Grant
- Patent Title: Semiconductor module with temperature detecting element
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Application No.: US16078991Application Date: 2017-03-13
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Publication No.: US10580754B2Publication Date: 2020-03-03
- Inventor: Shinya Yano , Shinichi Kinouchi , Yasushi Nakayama
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-074350 20160401
- International Application: PCT/JP2017/009969 WO 20170313
- International Announcement: WO2017/169693 WO 20171005
- Main IPC: H01L25/065
- IPC: H01L25/065 ; G01K7/01 ; H01L25/07 ; H02M1/00 ; H02M7/48 ; H01L25/18 ; H01L23/057 ; H01L23/31 ; H01L23/48 ; H01L23/495 ; H01L23/498 ; H01L23/538 ; H01L23/00 ; H01L25/10 ; H01L25/11 ; H01L25/16 ; H01L27/02 ; H02M7/5387 ; H02M7/00 ; G01K7/22 ; H01L23/24 ; H01L23/29 ; H01L23/367 ; H01L29/16 ; H01L29/739 ; H01L29/78 ; H02M1/32

Abstract:
In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.
Public/Granted literature
- US20190051640A1 SEMICONDUCTOR MODULE Public/Granted day:2019-02-14
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