Some embodiments include a memory array having memory cells arranged in rows and columns. The rows extend along a first direction and the columns extend along a second direction, with an angle between the first and second directions being less than 90°. Wordline trunk regions extend across the array and along a third direction substantially orthogonal to the second direction of the columns. Wordline branch regions extend from the wordline trunk regions and along the first direction. Semiconductor-material fins are along the rows. Each semiconductor-material fin has a first source/drain region, a second source/drain region, and a channel region between the first and second source/drain regions. Each channel region is overlapped by a wordline branch. Digit lines extend along the columns and are electrically coupled with the second source/drain regions. Charge-storage devices are electrically coupled with the first source/drain regions.