Invention Grant
- Patent Title: High-sensitivity depth sensor with non-avalanche photodetector
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Application No.: US16513653Application Date: 2019-07-16
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Publication No.: US10580820B2Publication Date: 2020-03-03
- Inventor: Saleh Masoodian , Jiaju Ma
- Applicant: Gigajot Technology Inc.
- Applicant Address: US CA Pasadena
- Assignee: Gigajot Technology Inc.
- Current Assignee: Gigajot Technology Inc.
- Current Assignee Address: US CA Pasadena
- Agent Charles Shemwell
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A sensing device includes a light source to emit light, a light sensor to detect reflection of the emitted light and distance determination circuitry responsive to reflected-light detection within the light sensor. The light sensor includes a photodetector having a photocharge storage capacity in excess of one electron and an output circuit that generates an output signal responsive to light detection within the photodetector with sub-hundred nanosecond latency. The distance determination circuitry measures an elapsed time based on transition of the output signal in response to photonic detection within the photodetector and determines, based on the elapsed time, a distance between the sensing device and a surface that yielded the reflection of the emitted light.
Public/Granted literature
- US20200020735A1 HIGH-SENSITIVITY DEPTH SENSOR WITH NON-AVALANCHE PHOTODETECTOR Public/Granted day:2020-01-16
Information query
IPC分类: