Invention Grant
- Patent Title: Method of making and device having a common electrode for transistor gates and capacitor plates
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Application No.: US16153482Application Date: 2018-10-05
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Publication No.: US10580822B2Publication Date: 2020-03-03
- Inventor: Kyoseop Choo , Guensik Lee , Manhyeop Han
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Seed IP Law Group LLP
- Priority: KR10-2016-0149010 20161109
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/146 ; H01L29/417 ; H01L29/45 ; H01L29/786 ; H04N3/14
Abstract:
Disclosed herein is a circuit comprising a first thin film transistor (TFT) and storage capacitor having a first electrode and a second electrode configured to face to each other. A second TFT is coupled to the capacitor, wherein a first gate electrode of the first TFT, a first electrode of the storage capacitor and a second gate electrode of the second TFT are integrally formed.
Public/Granted literature
- US20190051694A1 METHOD OF MAKING AND DEVICE HAVING A COMMON ELECTRODE FOR TRANSISTOR GATES AND CAPACITOR PLATES Public/Granted day:2019-02-14
Information query
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