Invention Grant
- Patent Title: Preventing threshold voltage variability in stacked nanosheets
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Application No.: US16103070Application Date: 2018-08-14
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Publication No.: US10580858B2Publication Date: 2020-03-03
- Inventor: Michael A. Guillorn , Nicolas J. Loubet
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/786 ; H01L29/66 ; H01L29/423 ; H01L29/775 ; B82Y10/00 ; H01L21/308 ; H01L29/10 ; H01L21/28 ; H01L27/092 ; H01L21/8238

Abstract:
Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having equal thickness work function metal layers. A nanosheet stack is formed on a substrate. The nanosheet stack includes a first sacrificial layer formed on a first nanosheet. A hard mask is formed on the first sacrificial layer and the first sacrificial layer is removed to form a cavity between the hard mask and the first nanosheet. A work function layer is formed to fill the cavity between the hard mask and the first nanosheet.
Public/Granted literature
- US20190006462A1 PREVENTING THRESHOLD VOLTAGE VARIABILITY IN STACKED NANOSHEETS Public/Granted day:2019-01-03
Information query
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