The present application provides a graphene light emitting transistor, including: a gate electrode disposed on a substrate; a gate insulating layer disposed on the substrate and the gate electrode; a source electrode and a drain electrode disposed on the gate insulating layer, wherein the source electrode and the drain electrode are formed by graphene; a graphene oxide layer disposed on the gate insulating layer and located between the source electrode and the drain electrode; a graphene quantum dot layer disposed on the graphene oxide layer, the source electrode and the drain electrode; and a water and oxygen resistant layer disposed on the graphene quantum dot layer. The present application also provides a method of fabricating the graphene light emitting transistor and an active graphene light emitting display apparatus having the graphene light emitting transistor.