A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.