Invention Grant
- Patent Title: Semiconductor light-emitting device including a reflector layer having a multi-layered structure
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Application No.: US15718438Application Date: 2017-09-28
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Publication No.: US10580939B2Publication Date: 2020-03-03
- Inventor: JungSung Kim , Junghee Kwak , Seong Seok Yang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee IP Law, P.C.
- Priority: KR10-2016-0152800 20161116
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/32 ; H01L33/42 ; H01L33/54 ; H01L33/62 ; H01L33/06 ; H01L33/10 ; H01L33/38 ; H01L33/40

Abstract:
A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.
Public/Granted literature
- US20180138372A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING A REFLECTOR LAYER HAVING A MULTI-LAYERED STRUCTURE Public/Granted day:2018-05-17
Information query
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