Invention Grant
- Patent Title: Memory device
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Application No.: US15707491Application Date: 2017-09-18
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Publication No.: US10580964B2Publication Date: 2020-03-03
- Inventor: Jea Gun Park , Du Yeong Lee , Song Hwa Hong , Jin Young Choi , Seung Eun Lee , Junli Li
- Applicant: Industry-University Cooperation Foundation Hanyang University
- Applicant Address: KR Seoul
- Assignee: Industry-University Cooperation Foundation Hanyang University
- Current Assignee: Industry-University Cooperation Foundation Hanyang University
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0037230 20150318; KR10-2015-0037231 20150318; KR10-2015-0037232 20150318; KR10-2015-0037233 20150318; KR10-2015-0037234 20150318; KR10-2015-0045171 20150331; KR10-2015-0045172 20150331; KR10-2015-0045173 20150331; KR10-2015-0045174 20150331
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/02 ; H01L27/22 ; H01L43/10 ; H01L43/12 ; G11C11/15
Abstract:
The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.
Public/Granted literature
- US20180006213A1 MEMORY DEVICE Public/Granted day:2018-01-04
Information query
