Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16234860Application Date: 2018-12-28
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Publication No.: US10581425B2Publication Date: 2020-03-03
- Inventor: Sho Nakagawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Paratus Law Group, PLLC
- Priority: JP2018-024578 20180214
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/06 ; H03K17/687 ; H03K17/0812 ; G01R19/165

Abstract:
A semiconductor device includes a power semiconductor switching element, a comparator circuit, a filter circuit and an erroneous-detection prevention circuit. The comparator circuit compares a value of an output voltage of the switching element with a threshold and outputs a comparison result as a determination signal. The filter circuit outputs the determination signal to the control circuit after a delay time required for the output voltage of the switching element to reach a predetermined voltage value for determining that the switching element is in a normal ON state after the switching element is turned on. The erroneous-detection prevention circuit changes a turn-on time of the switching element, the delay time, or a voltage value of the determination signal when a voltage of the power supply drops in a case where the switching element is normally turned on.
Public/Granted literature
- US20190253046A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-08-15
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