Invention Grant
- Patent Title: Source down power FET with integrated temperature sensor
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Application No.: US16297963Application Date: 2019-03-11
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Publication No.: US10581426B1Publication Date: 2020-03-03
- Inventor: Haian Lin , Frank Alexander Baiocchi , Masahiko Higashi , Namiko Hagane
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H02M3/335 ; H03K17/14 ; H01L25/16 ; H01L21/8249 ; H01L27/06

Abstract:
An electronic device includes a first semiconductor die with a first FET having a drain connected to a switching node, a source connected to a reference node, and a gate connected to a first switch control node. The first die also includes a diode-connected bipolar transistor that forms a temperature diode next to the first FET. The temperature diode includes a cathode connected to the reference node, and an anode connected to a bias node. The electronic device also includes a second semiconductor die with a second FET, and a package structure that encloses the first and second semiconductor dies.
Information query
IPC分类: